BCP52 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

PNP medium power transistors

BCP51; BCP52; BCP53

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−

−100 nA

IE = 0; VCB = −30 V; Tj = 125 °C

−−

−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−

−100 nA

hFE

DC current gain

VCE = −2 V; see Fig.2

IC = −5mA

−−

IC = −150 mA

−

250

IC = −500 mA

−−

hFE

DC current gain

IC = 150 mA; VCE = −2 V; see Fig.2

BCP53-10

−

160

BCP51-16; BCP52-16; BCP53-16

100

−

250

VCEsat

collector-emitter saturation voltage

IC = −500 mA; IB = −50 mA

−−

−0.5

VBE

base-emitter voltage

IC = −500 mA; VCE = −2V

−−

−1V

transition frequency

IC = −10 mA; VCE = −5V;

f = 100 MHz

−

115

−

MHz

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