CAB400M12XM3 datasheet(1/9 Pages) WOLFSPEED

Numer części	CAB400M12XM3

Szczegółowy opis	1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module

PDF	9 Pages

Scroll/Zoom	100%

Producent	WOLFSPEED [WOLFSPEED, INC.]

Strona internetowa	https://www.wolfspeed.com/

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are registered trademarks of Cree, Inc.

1

Rev. -, 2019-10-31

CAB400M12XM3

4600 Silicon Dr., Durham, NC 27703

CAB400M12XM3

1200 V, 400 A All-Silicon Carbide

Switching-Loss Optimized, Half-Bridge Module

Technical Features

• High Power Density Footprint

• High Junction Temperature (175 °C) Operation

• Low Inductance (6.7 nH) Design

• Implements Third Generation SiC MOSFET

Technology Optimized for Low Switching Loss

• Silicon Nitride Insulator and Copper Baseplate

V

DS

1200 V

I

DS

400 A

System Benefits

• Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,

low inductance design.

• Isolated integrated temperature sensing enables high-level temperature protection.

• Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.

Applications

• Motor & Traction Drives

• Vehicle Fast Chargers

• Uninterruptable Power Supplies

• Smart-Grid / Grid-Tied Distributed Generation

Package 80 x 53 x 19 mm

Key Parameters (T

C = 25˚C unless otherwise specified)

Symbol Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

VDSmax Drain-Source Voltage

1200

V

VGSmax Gate-Source Voltage, Maximum Value

-4

+19

AC frequency ≥ 1 Hz

Note 1

VGSop

Gate-Source Voltage, Recommended

Operating Value

-4

+15

Static

IDS

DC Continuous Drain Current

395

A

VGS = 15 V, TC= 25 ˚C, TVJ ≤ 175 ˚C Fig. 20

298

VGS = 15 V, TC= 90 ˚C, TVJ ≤ 175 ˚C Note 2

ISD

DC Source-Drain Current

395

VGS = 15 V, TC= 25 ˚C, TVJ ≤ 175 ˚C

ISDBD

DC Source-Drain Current (Body Diode)

220

VGS = - 4 V, TC= 25 ˚C, TVJ ≤ 175 ˚C

IDSpulsed Maximum Pulsed Drain-Source Current

800

t

P max limited by Tj max

VGS = 15 V, TC= 25 ˚C

ISDpulsed Maximum Pulsed Source-Drain Current

800

TVJop

Maximum Virtual Junction

Temperature under Switching

Conditions

-40

175

°C

Note 1

If MOSFET body diode is not used, V

GS max = -8/+19 V

Note 2

Assumes R

TH JC = 0.15 °C/W and RDS on = 6.4 mΩ. Calculate PD = (TVJ – TC) / RTH JC. Calculate ID max = √(PD / RDS on)

Podobny numer części - CAB400M12XM3

Producent	Numer części	Arkusz danych	Szczegółowy opis
Cree, Inc	CAB400M12XM3	801Kb / 9P	1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module

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Podobny opis - CAB400M12XM3

Producent	Numer części	Arkusz danych	Szczegółowy opis
Cree, Inc	CAB400M12XM3	801Kb / 9P	1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module
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	CAS300M12BM2	776Kb / 11P	1200 V, 300 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2021-02-08
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