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BUT12AF Arkusz danych(PDF) 5 Page - NXP Semiconductors |
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BUT12AF Arkusz danych(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() 1997 Aug 13 4 Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF Fig.2 Forward bias SOAR. Tmb <25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. handbook, full pagewidth MGB935 1 10 1102 103 104 I VCE (V) 10 10−1 102 10−2 10−4 10−3 IC (A) ICM max IC max II BUT12F BUT12AF DC |
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