BUT12AF datasheet(8/12 Pages) PHILIPS

Numer części	BUT12AF

Szczegółowy opis	Silicon diffused power transistors

PDF	12 Pages

Scroll/Zoom	100%

Producent	PHILIPS [NXP Semiconductors]

Strona internetowa	http://www.nxp.com

Logo

8 / 12 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUT12F; BUT12AF

Fig.9

Collector-emitter saturation voltage as a

function of base current.

(1) IC =3A.

(2) IC =6A.

(3) IC =8A.

Tj =25 °C; solid line: typical values; dotted line: maximum values.

handbook, halfpage

10−2

10−1

VCEsat

(V)

IB (A)

MGB872

(1)

(2)

(3)

Fig.10 DC current gain; typical values.

handbook, halfpage

MBC096

102

10−2

10−1

110

102

IC (A)

hFE

VCE = 5 V

Fig.11 Test circuit resistive load.

VCC = 250 V; tp =20 µs; VIM = −6 to +8 V; tp/T = 0.01.

The values of RB and RL are selected in accordance with ICon and

IBon requirements.

handbook, halfpage

MGE244

VCC

D.U.T.

VIM

Fig.12 Switching time waveforms with

resistive load.

tr ≤ 20 ns.

handbook, halfpage

MBB731

90%

10%

90%

10%

IB on

IB off

IC on

tr ≤30 ns

ton

BUT12AF Arkusz danych(PDF) 8 Page - NXP Semiconductors

BUT12AF Arkusz danych(HTML) 8 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Arkusz danych Pobierz

Link URL