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AM29BDS640G Arkusz danych(PDF) 73 Page - Advanced Micro Devices

Numer części AM29BDS640G
Szczegółowy opis  64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  77 Pages
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Producent  AMD [Advanced Micro Devices]
Strona internetowa  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29BDS640G Arkusz danych(HTML) 73 Page - Advanced Micro Devices

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May 9, 2006 25903C2
Am29BDS640G
71
Data
Sheet
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 1.8 V VCC, 1 million cycles. Additionally,
programming typicals assumes a checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 1.65 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 13 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
FBGA Ball Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
3. Fortified BGA ball capacitance TBD.
Data Retention
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
32 Kword
0.4
5
s
Excludes 00h programming
prior to erasure (Note 4)
8 Kword
0.4
5
Chip Erase Time
54
s
Word Programming Time
11.5
210
µs
Excludes system level
overhead (Note 5)
Accelerated Word Programming Time
4
120
µs
Chip Programming Time (Note 3)
48
144
s
Excludes system level
overhead (Note 5)
Accelerated Chip Programming Time
16
48
s
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4.2
5.0
pF
COUT
Output Capacitance
VOUT = 0
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
3.9
4.7
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150°C10
Years
125
°C20
Years



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