SP4T PIN Diode Switch

MA4SW410

V 1.00

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)

or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

6

Operation of the MA4SW410 Switch

Operation of the MA4SW Series of PIN Switches is achieved by the Simultaneous Application of Negative DC Current to the Low

Loss Port and Positive DC current to the Remaining Isolated Switching Ports as shown in Figure1. The Backside Area of the Die is

the RF and DC Return Ground Plane. The DC Return is achieved on Common Port J1. The DC Control Currents should be supplied

by Constant Current Sources. The voltages at these points will not exceed + 1.5 volts (1.2 volts typical) for Supply Currents up to

+ 50 mA. In the Low Loss State, the Series Diode must be Forward Biased and the Shunt Diode Reverse Biased. For All the Isolated

Ports, the Shunt Diode is Forward Biased and the Series Diode is Reverse Biased. The Bias Network Design should yield > 30 dB RF

to DC Isolation.

Best Insertion Loss, P1dB, IP3, and Switching Speed is Achieved by using a Voltage Pull-up Resistor in the DC Return Path, ( J1 ).

A Minimum Value of | -2 V | is recommended at this Return Node, which is achievable with a Standard , +/-5 V TTL Controlled PIN

Diode Driver. A Typical DC Bias Schematic for 2-18 GHz Operation is shown in Figure 1.

Figure 1:2 - 18 GHz Bias Network

HMIC Switch Die

100 ohms

39 pF

22 nH

22 pF

39 pF

DC Bias

J1

22 nH

22 pF

J2

J3

J4

J5