MMQ60R044RF Datasheet

*

Magnachip Semiconductor Ltd.

Dec./2022/Revision/1.0

3

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain – Source

Breakdown voltage

V(BR)DSS

600

-

-

V

VGS = 0V, ID = 1mA

Gate Threshold Voltage

VGS(th)

3.0

4.0

5.0

V

VDS = VGS, ID = 250μA

Zero Gate Voltage

Drain Current

IDSS

-

-

10

μA

VDS = 600V, VGS = 0V

Gate Leakage Current

IGSS

-

-

100

nA

VGS = ±30V, VDS = 0V

Drain-Source On

State Resistance

RDS(ON)

-

38

44.4

mΩ

VGS = 10V, ID = 30 A

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Input Capacitance

Ciss

-

6000

-

pF

VDS = 400V, VGS = 0V,

f = 400kHz

Output Capacitance

Coss

-

150

-

Reverse Transfer Capacitance

Crss

-

18

-

Effective Output Capacitance

Energy Related (5)

Co(er)

-

241

-

VDS = 0V to 480V,

VGS = 0V, f = 400kHz

Turn On Delay Time

td(on)

-

44.2

-

ns

VGS = 10V, RG = 2Ω,

VDD = 300V, ID = 60A

Rise Time

tr

-

199

-

Turn Off Delay Time

td(off)

-

112

-

Fall Time

tf

-

6.33

-

Total Gate Charge

Qg

-

154

-

nC

VGS = 10V, VDD = 480V,

ID = 60A

Gate – Source Charge

Qgs

-

50

-

Gate – Drain Charge

Qgd

-

64

-

Gate Resistance

RG

-

3.4

-

Ω

VGS = 0V, f = 1MHz

5) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS



Static Characteristics (Tc=25oC unless otherwise specified)



Dynamic Characteristics (Tc=25oC unless otherwise specified)

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