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HT45R34 Arkusz danych(PDF) 3 Page - Holtek Semiconductor Inc |
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HT45R34 Arkusz danych(HTML) 3 Page - Holtek Semiconductor Inc |
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3 / 41 page ![]() Pin Description Pin Name I/O Options Description PA0/INT0 PA1/INT1 PA2/TMR PA3~PA7 I/O Pull-high* Wake-up Bidirectional 8-bit I/O port. Each pin can be configured as a wake-up input via con- figuration options. Software instructions determine if the pin is a CMOS output or Schmitt trigger input. Pull-high resistors can be added to the each pin via a configu- ration option. Pins PA0 and PA1 are pin-shared with external interrupt input pins INT0 and INT1, respectively. Configuration options determine the interrupt enable/disable and the interrupt low/high trigger type. Pins PA2 is pin-shared with the external timer input pins TMR. RC1~RC12 I ¾ Capacitor or resistor connection pins RCOUT I ¾ Capacitor or resistor connection pin to RC OSC IN I ¾ Oscillation input pin RREF O ¾ Reference resistor connection pin CREF O ¾ Reference capacitor connection pin RES I ¾ Schmitt trigger reset input. Active low VSS ¾¾ Negative power supply, ground VDD ¾¾ Positive power supply OSC1 OSC2 I O Crystal or RC OSC1, OSC2 are connected to an RC network or Crystal determined by a configu- ration option, for the internal system clock. In the case of the RC oscillator, OSC2 can be used to monitor the system clock. Its frequency is 1/4 system clock. Note: *All pull-high resistors are controlled by an option bit. Absolute Maximum Ratings Supply Voltage ...........................VSS -0.3V to VSS+6.0V Storage Temperature ............................ -50°Cto125°C Input Voltage..............................VSS -0.3V to VDD+0.3V Operating Temperature........................... -40°Cto85°C IOL Total ..............................................................300mA IOH Total............................................................ -200mA Total Power Dissipation .....................................500mW Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. D.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD Operating Voltage ¾ fSYS=4MHz 2.2 ¾ 5.5 V fSYS=8MHz 3.3 ¾ 5.5 V IDD1 Operating Current (Crystal OSC, RC OSC) 3V No load, fSYS=4MHz ¾ 12 mA 5V ¾ 35 mA IDD2 Operating Current (Crystal OSC, RC OSC) 5V No load, fSYS=8MHz ¾ 48 mA ISTB1 Standby Current (WDT Enabled) 3V No load, system HALT ¾¾ 5 mA 5V ¾¾ 10 mA HT45R34 Rev. 1.20 3 October 15, 2007 |
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