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DSP56321 Arkusz danych(PDF) 22 Page - Freescale Semiconductor, Inc |
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DSP56321 Arkusz danych(HTML) 22 Page - Freescale Semiconductor, Inc |
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22 / 84 page ![]() DSP56321 Technical Data, Rev. 11 2-2 Freescale Semiconductor Specifications 2.2 Thermal Characteristics 2.3 DC Electrical Characteristics Table 2-2. Thermal Characteristics Thermal Resistance Characteristic Symbol MAP-BGA Value Unit Junction-to-ambient, natural convection, single-layer board (1s)1,2 RθJA 44 °C/W Junction-to-ambient, natural convection, four-layer board (2s2p)1,3 RθJMA 25 °C/W Junction-to-ambient, @200 ft/min air flow, single-layer board (1s)1,3 RθJMA 35 °C/W Junction-to-ambient, @200 ft/min air flow, four-layer board (2s2p)1,3 RθJMA 22 °C/W Junction-to-board 4 RθJB 13 °C/W Junction-to-case thermal resistance 5 RθJC 7 °C/W Notes: 1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. 2. Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board horizontal. 3. Per JEDEC JESD51-6 with the board horizontal. 4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the top surface of the board near the package. 5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1). Table 2-3. DC Electrical Characteristics7 Characteristics Symbol Min Typ Max Unit Supply voltage 1: •Core (VCCQL) •I/O (VCCQH, VCCA, VCCD, VCCC, VCCH, and VCCS) 1.5 3.0 1.6 3.3 1.7 3.6 V V Input high voltage • D[0–23], BG, BB, TA • MOD/IRQ 2 RESET, PINIT/NMI and all JTAG/ESSI/SCI/Timer/HI08 pins •EXTAL9 VIH VIHP VIHX 2.0 2.0 0.8 × VCCQH — — — VCCQH + 0.3 VCCQH + 0.3 VCCQH V V V Input low voltage • D[0–23], BG, BB, TA, MOD/IRQ2, RESET, PINIT • All JTAG/ESSI/SCI/Timer/HI08 pins •EXTAL9 VIL VILP VILX –0.3 –0.3 –0.3 — — — 0.8 0.8 0.2 × V CCQH V V V Input leakage current IIN –10 — 10 µA High impedance (off-state) input current (@ 2.4 V / 0.4 V) ITSI –10 — 10 µA Output high voltage8 •TTL (IOH = –0.4 mA) 6 •CMOS (IOH = –10 µA) 6 VOH 2.4 VCCQH – 0.01 — — — — V V Output low voltage 8 •TTL (IOL = 3.0 mA) 6 •CMOS (IOL = 10 µA) 6 VOL — — — — 0.4 0.01 V V |
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