MP4501 datasheet(1/6 Pages) TOSHIBA

Numer części	MP4501

Szczegółowy opis	High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

PDF	6 Pages

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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1 / 6 page

MP4501

2004-07-01

1

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type

(Four Darlington Power Transistors in One)

MP4501

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive Load

Switching

• Package with heat sink isolated to lead (SIP 12 pins)

• High collector power dissipation (4-device operation)

: PT = 5 W (Ta = 25°C)

• High collector current: IC (DC) = 3 A (max)

• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A)

• Diode included for absorbing fly-back voltage

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

120

V

Collector-emitter voltage

VCEO

100

V

Emitter-base voltage

VEBO

6

V

DC

IC

3

Collector current

Pulse

ICP

6

A

Continuous base current

IB

0.5

A

Collector power dissipation

(1-device operation)

PC

3.0

W

Ta = 25°C

5.0

Collector power

dissipation

(4-device operation)

Tc = 25°C

PT

25

W

Isolation voltage

VIsol

1000

V

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-32B1A

Weight: 6.0 g (typ.)

1

R1 R2

7

R1 ≈ 4.5 kΩ

R2 ≈ 300 Ω

6

12

8

5

2

3

10

49

11

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