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MP4501 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części MP4501
Szczegółowy opis  High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
PDF  6 Pages
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MP4501 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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MP4501
2004-07-01
2
Marking
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from junction to
ambient
(4-device operation, Ta = 25°C)
ΣRth (j-a)
25
°C/W
Thermal resistance from junction to
case
(4-device operation, Tc = 25°C)
ΣRth (j-c)
5.0
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL
260
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0 A
10
μA
Collector cut-off current
ICEO
VCE = 100 V, IB = 0 A
10
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0 A
0.5
2.5
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0 A
120
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0 A
100
V
hFE (1)
VCE = 2 V, IC = 1.5 A
2000
15000
DC current gain
hFE (2)
VCE = 2 V, IC = 3 A
1000
Collector-emitter
VCE (sat)
IC = 1.5 A, IB = 3 mA
1.5
Saturation voltage
Base-emitter
VBE (sat)
IC = 1.5 A, IB = 3 mA
2.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
60
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
30
pF
Turn-on time
ton
0.3
Storage time
tstg
2.0
Switching time
Fall time
tf
IB1 = −IB2 = 3 mA, duty cycle ≤ 1%
0.4
μs
20 μs
VCC = 30 V
Output
IB2
IB1
Input
MP4501
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)



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