IRFR/U120Z

2

www.irf.com

S

D

G

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

–––

V

∆V

(BR)DSS/∆TJ

Breakdown Voltage Temp. Coefficient

–––

0.084

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

150

190

m

Ω

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

gfs

Forward Transconductance

16

–––

–––

S

IDSS

Drain-to-Source Leakage Current

–––

–––

20

µA

–––

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

–––

200

nA

Gate-to-Source Reverse Leakage

–––

–––

-200

Qg

Total Gate Charge–––

6.9

10

Qgs

Gate-to-Source Charge

–––

1.6

–––

nC

Qgd

Gate-to-Drain ("Miller") Charge

–––

3.1

–––

td(on)

Turn-On Delay Time

–––

8.3

–––

tr

Rise Time

–––26–––

td(off)

Turn-Off Delay Time

–––27–––

ns

tf

Fall Time

–––23–––

LD

Internal Drain Inductance

–––

4.5

–––

Between lead,

nH

6mm (0.25in.)

LS

Internal Source Inductance

–––

7.5

–––

from package

and center of die contact

Ciss

Input Capacitance

–––

310

–––

Coss

Output Capacitance

–––

41

–––

Crss

Reverse Transfer Capacitance

–––

24

–––

pF

Coss

Output Capacitance

–––

150

–––

Coss

Output Capacitance

–––

26

–––

Coss eff.

Effective Output Capacitance

–––

57

–––

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

IS

Continuous Source Current

–––

–––

8.7

(Body Diode)

A

ISM

Pulsed Source Current

–––

–––

35

(Body Diode)

Ù

VSD

Diode Forward Voltage

–––

–––

1.3

V

trr

Reverse Recovery Time

–––

2436ns

Qrr

Reverse Recovery Charge

–––

23

35

nC

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 80V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 80V

f

VGS = 10V

e

VDD = 50V

ID = 5.2A

RG = 53 Ω

TJ = 25°C, IS = 5.2A, VGS = 0V e

TJ = 25°C, IF = 5.2A, VDD = 50V

di/dt = 100A/µs

e

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 5.2A

e

VDS = VGS, ID = 250µA

VDS = 100V, VGS = 0V

VDS = 100V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VDS = 25V, ID = 5.2A

ID = 5.2A

VDS = 80V

Conditions

VGS = 10V

e

VGS = 0V

VDS = 25V

ƒ = 1.0MHz

VGS = 20V

VGS = -20V