IRFR120Z

IRFU120Z

HEXFET® Power MOSFET

VDSS = 100V

RDS(on) = 190mΩ

ID = 8.7A

10/3/03

www.irf.com

1

AUTOMOTIVE MOSFET

PD - 94754

Specifically designed for Automotive applications, this HEXFET®

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive avalanche

rating . These features combine to make this design an extremely

efficient and reliable device for use in Automotive applications and

a wide variety of other applications.

S

D

G

Description

●

Advanced Process Technology

●

Ultra Low On-Resistance

●

175°C Operating Temperature

●

Fast Switching

●

Repetitive Avalanche Allowed up to Tjmax

Features

D-Pak

IRFR120Z

I-Pak

IRFU120Z

HEXFET® is a registered trademark of International Rectifier.

Absolute Maximum Ratings

Parameter

Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

A

IDM

Pulsed Drain Current

™

PD @TC = 25°C Power Dissipation

W

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

V

EAS (Thermally limited) Single Pulse Avalanche Energyd

mJ

EAS (Tested )

Single Pulse Avalanche Energy Tested Value

h

IAR

Avalanche Current

Ù

A

EAR

Repetitive Avalanche Energy

g

mJ

TJ

Operating Junction and

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

4.28

RθJA

Junction-to-Ambient (PCB mount)

i

–––

40

°C/W

RθJA

Junction-to-Ambient

–––

110

-55 to + 175

300 (1.6mm from case )

10 lbf

yin (1.1Nym)

35

0.23

± 20

Max.

8.7

6.1

35

20

18

See Fig.12a, 12b, 15, 16