STB30NS15 datasheet(1/9 Pages) STMICROELECTRONICS

Numer części	STB30NS15

Szczegółowy opis	N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

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Producent	STMICROELECTRONICS [STMicroelectronics]

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October 2001

STB30NS15

N-CHANNEL 150V - 0.075

Ω - 30A D2PAK

LOW GATE CHARGE STripFET™ POWER MOSFET

s

TYPICAL RDS(on) = 0.075 Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

STB30NS15

150 V

<0.1

Ω

30 A

1

3

D2PAK

TO-263

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

•) Pulse width limited by safe operating area.

(1) ISD ≤ 30A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25 oC, ID = 15A, VDD = 25V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

150

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

150

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuos) at TC = 25°C

30

A

ID

Drain Current (continuos) at TC = 100°C

21

A

IDM(•)

Drain Current (pulsed)

120

A

Ptot

Total Dissipation at TC = 25°C

110

W

Derating Factor

0.73

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

2

V/ns

EAS (2)

Single Pulse Avalanche Energy

250

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

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