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STB30NS15 Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STB30NS15
Szczegółowy opis  N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET
PDF  9 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB30NS15 Arkusz danych(HTML) 3 Page - STMicroelectronics

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STB30NS15
Thermal Impedance
SWITCHING ON (*)
SWITCHING OFF(*)
SOURCE DRAIN DIODE(*)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by Tjmax
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 75 V
ID =15 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
12
28
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=120V ID=30A VGS=10V
64
8
27
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 75 V
ID = 15 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
50
12
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 120 V
ID = 30 A
RG = 4.7Ω,
VGS = 10 V
(Inductive Load, Figure 5)
50
17
11
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
30
120
A
A
VSD (*)
Forward On Voltage
ISD = 30 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 30 A
di/dt = 100A/µs
VDD = 50 V
Tj = 150°C
(see test circuit, Figure 5)
190
1.25
13
ns
µC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area



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