MJD122 datasheet(1/9 Pages) STMICROELECTRONICS

Numer części	MJD122

Szczegółowy opis	Low voltage power Darlington transistor

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Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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1 / 9 page

October 2007

Rev 10

1/9

9

Table 1.

Device summary

Order code

Marking

Package

Packaging

MJD122T4

MJD122

TO-252 (DPAK)

Tape & reel

MJD122-1

MJD122

TO-251 (IPAK)

Tube

MJD122

Low voltage power Darlington transistor

Features

■

Low base drive requirements

■

Integrated antiparallel collector-emitter diode

■

Through hole TO-251 (IPAK) power package in

tube (suffix “-1”)

■

Surface mounting TO-252 (DPAK) power

package in tape & reel (suffix “T4”)

Applications

■

General purpose switching and amplifier

Description

The device is manufactured using Epitaxial-base

technology for high performance.

PNP type is MJD127.

Figure 1.

Internal schematic diagram

TO-251

IPAK

3

2

1

3

(suffix “-1”)

TO-252

DPAK

(suffix “T4”)

R1 typ. =10 KW R2 typ. =150 W

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