MJD122 datasheet(3/9 Pages) STMICROELECTRONICS

Numer części	MJD122

Szczegółowy opis	Low voltage power Darlington transistor

PDF	9 Pages

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Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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MJD122

Electrical characteristics

3/9

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (1) Pulsed duration = 300

µs, duty cycle ≤1.5%

2.1

Electrical characteristic (curves)

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 100 V

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = 50 V

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5V

2mA

VCEO(sus) (1)

Collector-emitter

sustaining voltage

(IB = 0)

IC =30 mA

100

VCE(sat) (1) Collector-emitter

saturation voltage

IC = 4 A

_ IB = 16 mA

IC = 8 A

_ IB = 80 mA

VBE(sat) (1)

Base-emitter saturation

voltage

IC = 8 A

_ IB = 80 mA

4.5

VBE(on) (1) Base-emitter on voltage

IC = 4 A

_ VCE = 4 V

2.8

hFE

DC current gain

IC = 4A

VCE = 4 V

IC = 8 A

VCE = 4 V

1000

100

12000

Figure 2.

Safe operating area

Figure 3.

Derating curve

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