STTH1R04Q datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

STTH1R04

Characteristics

3/10

Table 5.

Dynamic characteristics (Tj = 25 °C unless otherwise stated)

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25 °C

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25 °C

IRM

Reverse recovery current

IF = 1 A, dIF/dt = -200 A/µs,

VR = 320 V, Tj = 125 °C

2.5

3.5

tfr

Forward recovery time

IF = 1 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25 °C

VFP

Forward recovery voltage

IF = 1 A

dIF/dt = 100 A/µs

3.5

Figure 1.

Conduction losses versus

average forward current

Figure 2.

Forward voltage drop versus

forward current

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

0.2

0.4

0.6

0.8

1.0

1.2

P(W )

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

IF(AV)(A)

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

FM(A)

J=150°C

(Maximum values)

J=150°C

(Maximum values)

J=150°C

(Typical values)

J=150°C

(Typical values)

J=25°C

J =25°C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance junction to lead

versus pulse duration (DO-41)

Figure 4.

Relative variation of thermal

impedance junction to lead

versus pulse duration (DO-15)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-l)/Rth(j-l)

Single pulse

DO-41

leads=10mm

tP(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-l)/Rth(j-l)

Single pulse

DO-15

Lleads=10mm

tP(s)

STTH1R04Q Arkusz danych(PDF) 3 Page - STMicroelectronics

STTH1R04Q Arkusz danych(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

Arkusz danych Pobierz

Link URL