STTH1R04Q datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STTH1R04

4/10

Figure 5.

Relative variation of thermal

impedance junction to lead

versus pulse duration, SMA

Figure 6.

Relative variation of thermal

impedance junction to lead

versus pulse duration, SMB

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-l)/Rth(j-l)

Single pulse

SMA

cu=1cm²

tP(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Zth(j-l)/Rth(j-l)

Single pulse

SMB

Scu=1cm²

tP(s)

Figure 7.

Junction capacitance versus

reverse voltage applied (typical

values)

Figure 8.

Reverse recovery charges versus

dIF/dt (typical values)

100

1000

C(pF)

F=1MHz

OSC=30mVRMS

j=25°C

VR(V)

100

1000

RR(nC)

F= 1 A

R=320 V

j=125 °C

j=25 °C

dIF/dt(A/µs)

Figure 9.

Reverse recovery time versus

dIF/dt (typical values)

Figure 10.

Peak reverse recovery current

versus dIF/dt (typical values)

100

1000

RR(ns)

F= 1 A

R=320 V

j=125 °C

j=25 °C

dIF/dt(A/µs)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

100

1000

RM(A)

F= 1 A

R=320 V

j=125 °C

j=25 °C

dIF/dt(A/µs)

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