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STLD20CP1 Arkusz danych(PDF) 8 Page - STMicroelectronics |
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STLD20CP1 Arkusz danych(HTML) 8 Page - STMicroelectronics |
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8 / 19 page ![]() Electrical characteristics STLD20CP1 8/19 Symbol Parameter Test conditions Min. Typ. Max. Unit V-DM1L V- DM2L V- TFL V-SELL Low voltage threshold VI = 2.8V to 6V 0.6 V I-DM1L I-DM1L leakage current V-DM1L = 0V 0.1 0.5 µA I-DM2L I-DM2L leakage current V-DM2L = 0V 0.1 0.5 µA I-TFL I-TFL leakage current V-TFL = 0V 0.1 0.5 µA I-SELL I-SELL leakage current V-SELL = 0V 0.1 0.5 µA Single-wire pulse dimming TLO Duration time of the low pulse 0.5 250 µs THI Duration time of the high pulse 0.5 µs TSHDN Duration time to shut down the current 500 µs Initial THI Duration time required for the first pulse 50 µs Flash section charge pump VIF Voltage threshold Flash mode VI-0.6 V VIT Voltage threshold Torch mode VI-0.6 V VFB_CP Feedback charge pump I_Torch = 100mA 150 mV VO_CP Over voltage charge pump 6 V IO_CP Max Max current charge pump Flash mode @ VI ≥ 3V (1) 300 mA Torch mode @ VI ≥ 3V (1) 130 Flash section charge pump I_Flash Accuracy current flash VI = 3.4V, RFL = 1950Ω -10 10 % I_Flash (LINE) Static line regulation current flash K*VIF/RFL = I_Flash, VI = 3.0V to 4.2V @ TJ = 25°C -10 10 % I_Torch Accuracy current torch VIN = 3.4V, RTH = 7800Ω -10 10 % I_Torch (LINE) Static line regulation current torch K*VIT/RTH = I_Torch, VI = 3.0V to 4.2V @ TJ = 25°C -10 10 % Thermal shutdown TSD Thermal shutdown 180 °C THS Thermal shutdown hysteresis 20 °C 1. Guaranteed by design. Table 7. Electrical characteristics for STLD20CP1 (continued) (TJ = -40 °C to 85 °C, VI = 3.4 V, CI = 2.2 µF, CO1,2 = 2.2 µF, VO_SU = 15 V, VO_CP = 4 V, CCP = 1 µF, CFB_SU = 100 pF, L = 3.3 µH, DM1 = DM2 = 1.6 V, typ. values @ 25 °C, unless otherwise specified) |
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