BUL805 datasheet(4/8 Pages) STMICROELECTRONICS

Numer części	BUL805

Szczegółowy opis	High voltage fast-switching NPN power transistor

PDF	8 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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Electrical characteristics

BUL805

4/8

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

(1) Pulsed duration = 300 µs, duty cycle

≤ 1.5%

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 800 V

VCE = 800 V TC = 125 °C

100

500

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = 450 V

250

µA

VEBO

Emitter-base voltage

(IC = 0)

IE = 10 mA

VCEO(sus)

(1)

Collector-emitter

sustaining voltage

(IB = 0)

IC = 10 mA

450

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

IC = 3 A

IB = 0.6 A

0.4

0.6

0.8

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

IC = 3 A

IB = 0.6 A

1.1

1.3

1.5

hFE

DC current gain

IC = 10 mA

VCE = 5 V

IC = 2 A

VCE = 5 V

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