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STS6PF30L Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STS6PF30L Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() 1/8 May 2003 . STS6PF30L P-CHANNEL 30V - 0.027 Ω - 6A SO-8 STripFET™ POWER MOSFET s TYPICAL RDS(on) = 0.027 Ω s STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY s LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s MOBILE PHONE APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT TYPE VDSS RDS(on) ID STS6PF30L 30 V <0.030 Ω 6 A Information furnished is believed to be accurate and reliable. However, STMicroel of use of such information nor for any infringement of patents or other rights of third by implication or otherwise under any patent or patent rights of STMicroelectronic to change without notice. This publication supersedes and replaces all information authorized for use as critical components in life support devices or systems withou The ST logo is registered trademark of ST ® 2003 STMicroelectronics - All Righ All other names are the property of their re STMicroelectronics GROUP OF CO Australia - Brazil - China - Finland - France - Germany - Hong Kong - In Singapore - Spain - Sweden - Switzerland - Un http://www.st.com SO-8 ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 30 V VGS Gate- source Voltage ± 16 V ID Drain Current (continuous) at TC = 25°C 6A ID Drain Current (continuous) at TC = 100°C 3.8 A IDM(•) Drain Current (pulsed) 24 A Ptot Total Dissipation at TC = 25°C 2.5 W INTERNAL SCHEMATIC DIAGRAM |
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