STW60NE10 datasheet(1/8 Pages) STMICROELECTRONICS

Numer części	STW60NE10

Szczegółowy opis	N - CHANNEL 100V - 0.016ohm - 60A TO-247 STripFET POWER MOSFET

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Producent	STMICROELECTRONICS [STMicroelectronics]

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STW60NE10

N - CHANNEL 100V - 0.016

Ω - 60A TO-247

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.016

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based

process. The resulting

transistor shows extremely high packing density

for

low

on-resistance,

rugged

avalanche

characteristics and less critical alignment steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

®

INTERNAL SCHEMATIC DIAGRAM

June 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

100

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC60

A

ID

Drain Current (continuous) at Tc =100

oC42

A

IDM (

•)

Drain Current (pulsed)

240

A

Ptot

T otal Dissipat ion at Tc =25

oC

180

W

Derating Factor

1.2

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

9

V/ns

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STW 60NE10

100 V

<0.022

Ω

60 A

1

2

3

TO-247

1/8

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