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LTC6907

6907fa

VOH

High Level Output Voltage (Note 5)

V+ = 3.6V

IOH = – 100µA

●

3.40

3.57

IOH = – 1mA

●

3.10

3.45

V+ = 3V

IOH = – 100µA

●

2.8

2.97

IOH = – 1mA

●

2.5

2.80

VOL

Low Level Output Voltage (Note 5)

V+ = 3.6V

IOL = 100µA

●

0.08

0.2

IOL = 1mA

●

0.25

0.8

V+ = 3V

IOL = 100µA

●

0.07

0.2

IOL = 1mA

●

0.25

0.8

OUT Rise Time (Note 6)

V+ = 3.6V

V+ = 3V

OUT Fall Time (Note 6)

V+ = 3.6V

V+ = 3V

VGS

GRD Pin Voltage Relative to SET Pin

–10

µA ≤ IGRD ≤ 0.3µA

●

–10

Voltage

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

The

● denotes the specifications which apply over the full specified

temperature range, otherwise specifications are at TA = 25°C. V+ = 3V to 3.6V, CL = 5pF, Pin 3 = V+ unless otherwise noted.

All voltages are with respect to GND.

ELECTRICAL CHARACTERISTICS

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: Some frequencies may be generated using two different values of

RSET. For these frequencies, the error is specified assuming that the larger

value of RSET is used.

Note 3: Frequency accuracy is defined as the deviation from the fOUT

equation.

Note 4: Jitter is the ratio of the peak-to-peak deviation of the period to the

mean of the period. This specification is based on characterization and is

not 100% tested.

Note 5: Current into a pin is given as a positive value. Current out of a pin

is given as a negative value.

Note 6: Output rise and fall times are measured between the 10% and

90% power supply levels.

Note 7: The LTC6907C is guaranteed to meet specified performance from

°C to 70°C. The LTC6907C is designed, characterized and expected to

meet specified performance from –40

°C to 85°C but is not tested or QA

sampled at these temperatures. The LTC6907I is guaranteed to meet

specified performance from –40

°C to 85°C.

Note 8: Consult the Applications Information section for operation with

supplies higher than 3.6V.

Note 9: Long term drift on silicon oscillators is primarily due to the

movement of ions and impurities within the silicon and is tested at 30

°C

under otherwise nominal operating conditions. Long term drift is specified

as ppm/

√kHr due to the typically non-linear nature of the drift. To calculate

drift for a set time period, translate that time into thousands of hours, take

the square root and multiply by the typical drift number. For instance, a

year is 8.77kHr and would yield a drift of 888ppm at 300ppm/

√kHr. Ten

years is 87.7kHr and would yield a drift of 2,809 ppm at 300 ppm/

√kHr.

Drift without power applied to the device may be approximated as 1/10th of

the drift with power, or 30ppm/

√kHr for a 300ppm/√kHr device.

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