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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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APTGF30TL601G Arkusz danych(PDF) 2 Page - Microsemi Corporation |
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APTGF30TL601G Arkusz danych(HTML) 2 Page - Microsemi Corporation |
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2 / 9 page  APTGF30TL601G www.microsemi.com 2- 9 All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 500 µA Tj = 25°C 1.7 2.0 2.45 VCE(on) Collector Emitter on Voltage VGE =15V IC = 30A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 1mA 4 6 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Q1 to Q4 Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 1350 Coes Output Capacitance 193 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 120 pF Qg Total gate Charge 99 Qge Gate – Emitter Charge 10 Qgc Gate – Collector Charge VGE = 15V VBus = 300V IC =30A 60 nC Td(on) Turn-on Delay Time 30 Tr Rise Time 12 Td(off) Turn-off Delay Time 80 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω 15 ns Td(on) Turn-on Delay Time 32 Tr Rise Time 12 Td(off) Turn-off Delay Time 90 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω 21 ns Eon Turn-on Switching Energy Tj = 125°C 0.3 Eoff Turn-off Switching Energy VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω Tj = 125°C 0.8 mJ Isc Short Circuit data VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C 135 A RthJC Junction to Case Thermal Resistance 0.9 °C/W |
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