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APTGF50TL60T3G Arkusz danych(PDF) 5 Page - Microsemi Corporation

Numer części APTGF50TL60T3G
Szczegółowy opis  Three level inverter NPT IGBT Power Module
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  MICROSEMI [Microsemi Corporation]
Strona internetowa  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF50TL60T3G Arkusz danych(HTML) 5 Page - Microsemi Corporation

  APTGF50TL60T3G Datasheet HTML 1Page - Microsemi Corporation APTGF50TL60T3G Datasheet HTML 2Page - Microsemi Corporation APTGF50TL60T3G Datasheet HTML 3Page - Microsemi Corporation APTGF50TL60T3G Datasheet HTML 4Page - Microsemi Corporation APTGF50TL60T3G Datasheet HTML 5Page - Microsemi Corporation APTGF50TL60T3G Datasheet HTML 6Page - Microsemi Corporation APTGF50TL60T3G Datasheet HTML 7Page - Microsemi Corporation APTGF50TL60T3G Datasheet HTML 8Page - Microsemi Corporation  
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APTGF50TL60T3G
www.microsemi.com
5- 8
Q1 to Q4 Typical performance curve
Output characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
25
50
75
100
01234
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=25°C
TJ=125°C
0
25
50
75
100
01
2
3
45
67
8
9
10
VGE, Gate to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
0.80
0.90
1.00
1.10
1.20
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
60
70
25
50
75
100
125
150
TC, Case Temperature (°C)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
VCE=300V
VCE=480V
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100 125 150 175 200
Gate Charge (nC)
IC = 50A
TJ = 25°C
Output Characteristics (VGE=10V)
TJ=25°C
TJ=125°C
0
25
50
75
100
0123
4
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle



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