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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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APTGF50TL60T3G Arkusz danych(PDF) 2 Page - Microsemi Corporation |
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APTGF50TL60T3G Arkusz danych(HTML) 2 Page - Microsemi Corporation |
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2 / 8 page  APTGF50TL60T3G www.microsemi.com 2- 8 All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 500 µA Tj = 25°C 1.7 2.0 2.45 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 50A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 1mA 4 6 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Q1 to Q4 Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 2200 Coes Output Capacitance 323 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 200 pF Qg Total gate Charge 166 Qge Gate – Emitter Charge 20 Qgc Gate – Collector Charge VGE = 15V VBus = 300V IC = 50A 100 nC Td(on) Turn-on Delay Time 40 Tr Rise Time 9 Td(off) Turn-off Delay Time 120 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω 12 ns Td(on) Turn-on Delay Time 42 Tr Rise Time 10 Td(off) Turn-off Delay Time 130 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω 21 ns Eon Turn-on Switching Energy Tj = 125°C 0.5 Eoff Turn-off Switching Energy VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω Tj = 125°C 1 mJ Isc Short Circuit data VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C 225 A RthJC Junction to Case Thermal Resistance 0.5 °C/W |
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