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MPC5200B Arkusz danych(PDF) 5 Page - Freescale Semiconductor, Inc |
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MPC5200B Arkusz danych(HTML) 5 Page - Freescale Semiconductor, Inc |
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5 / 72 page ![]() MPC5200B Data Sheet, Rev. 4 Freescale Semiconductor 5 1.1.3 DC Electrical Specifications Table 3 gives the DC Electrical characteristics for the MPC5200B at recommended operating conditions (see Table 2). Input voltage — standard I/O buffers Vin 0 VDD_IO V D2.7 Input voltage — memory I/O buffers (SDR) VinSDR 0 VDD_MEM_IOSDR VD2.8 Input voltage — memory I/O buffers (DDR) VinDDR 0VDD_MEM_IODDR VD2.9 Ambient operating temperature range(2) TA –40 +85 oC D2.10 Die junction operating temperature range Tj –40 +115 oC D2.12 1 These are recommended and tested operating conditions. Proper device operation outside these conditions is not guaranteed. 2 Maximum e300 core operating frequency is 400 MHz. Table 3. DC Electrical Specifications Characteristic Condition Sym Min Max Unit SpecID Input high voltage Input type = TTL VDD_IO/VDD_MEM_IOSDR VIH 2.0 — V D3.1 Input high voltage Input type = TTL VDD_MEM_IODDR VIH 1.7 — V D3.2 Input high voltage Input type = PCI VDD_IO VIH 2.0 — V D3.3 Input high voltage Input type = SCHMITT VDD_IO VIH 2.0 — V D3.4 Input high voltage SYS_XTAL_IN CVIH 2.0 — V D3.5 Input high voltage RTC_XTAL_IN CVIH 2.0 — V D3.6 Input low voltage Input type = TTL VDD_IO/VDD_MEM_IOSDR VIL —0.8 V D3.7 Input low voltage Input type = TTL VDD_MEM_IODDR VIL —0.7 V D3.8 Input low voltage Input type = PCI VDD_IO VIL —0.8 V D3.9 Input low voltage Input type = SCHMITT VDD_IO VIL — 0.8 V D3.10 Input low voltage SYS_XTAL_IN CVIL — 0.8 V D3.11 Input low voltage RTC_XTAL_IN CVIL — 0.8 V D3.12 Input leakage current Vin = 0 or VDD_IO/VDD_IO_MEMSDR (depending on input type (1) ) IIN — ±2 μA D3.13 Input leakage current SYS_XTAL_IN Vin = 0 or VDD_IO IIN — ±10 μA D3.14 Table 2. Recommended Operating Conditions (continued) Characteristic Sym Min(1) Max(1) Unit SpecID |
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