HAL855UT-K datasheet(29/42 Pages) MICRONAS

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DATA SHEET

HAL855

Micronas

Nov. 26, 2008; DSH000149_003EN

4.5. Ambient Temperature

Due to the internal power dissipation, the temperature

on the silicon chip (junction temperature TJ) is higher

than the temperature outside the package (ambient

temperature TA).

At static conditions and continuous operation, the fol-

lowing equation applies:

For typical values, use the typical parameters. For

worst case calculation, use the max. parameters for

IDD and Rth, and the max. value for VDD from the

application.

Example with typical given values:

IDD =0.007 A

VDD =5 V

Rthja = 235 K/W

Tjmax = 170

The current through the output is calculated as follows:

VPull-up = 5 V

RPull-up = 470 Ω

RDS,on =50 Ω

ΔT is calculated as follows:

The maximum ambient temperature TAmax can be

calculated as:

−1080

−17

−1150

−16

−1180

−15

−1270

−14

−1290

−13

−1360

−12

−1430

−11

−1460

−10

−1540

−915

−1600

−816

−1670

−717

−1740

−618

−1810

−519

−1880

−420

−1950

−321

−2020

−222

−2100

−123

Table 4–1: Temperature compensation, continued

Typ. Temperature Coefficient

of Magnet (ppm/K)

TCSQ

thjx

Out

OutLow

thjx

Out

Pull

–

Pull

–

DS on

----------------------------------------------

520

-------------

0.01A

∼

OutLow

Out

DS on

0.01A

0.5V

ΔT

0.007A

235

-----

0.01

× 5V 235

-----

9.4

Amax

Jmax

–

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