PBSS302ND datasheet(3/14 Pages) NXP

3 / 14 page

PBSS302ND_2

Product data sheet

Rev. 02 — 18 February 2008

3 of 14

NXP Semiconductors

PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

[1]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[4]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[5]

Operated under pulsed conditions: Duty cycle

δ≤ 10 % and pulse width tp ≤ 10 ms.

junction temperature

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, mounting pad for collector 1 cm2

(4) FR4 PCB, standard footprint

Fig 1.

Power derating curves

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

(1)

Tamb (°C)

−75

175

125

−25

006aaa270

800

400

1200

1600

Ptot

(mW)

(2)

(4)

(3)

PBSS302ND Arkusz danych(PDF) 3 Page - NXP Semiconductors

PBSS302ND Arkusz danych(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Arkusz danych Pobierz

Link URL