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TLE7243SL Arkusz danych(PDF) 9 Page - Infineon Technologies AG

Numer części TLE7243SL
Szczegółowy opis  8 Channel Protected Low-Side Relay Switch
PDF  28 Pages
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Producent  INFINEON [Infineon Technologies AG]
Strona internetowa  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE7243SL Arkusz danych(HTML) 9 Page - Infineon Technologies AG

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Datasheet
9
Rev. 1.0, 2009-09-30
SPI Driver for Enhanced Relay Control
SPIDER - TLE7243SL
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Unless otherwise specified:
T
j = -40 °C to +150 °C; VDD = 3.0 V to VDDA, VDDA= 4.5V to 5.5V
all voltages with respect to ground, positive current flowing into pin
1) Not subject to production test, specified by design.
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Max.
Power Supply
4.1.1
Digital supply voltage
V
DD
-0.3
5.5
V
–
4.1.2
Analog supply voltage
VDDA
-0.3
5.5
V
–
4.1.3
Output voltage for short circuit protection
(single pulse)
VOUT
036
V
–
Power Stages
4.1.4
Load current
ID
-0.5
0.5
A
4.1.5
Voltage at power transistor
VDS
–
41
V
active clamped
4.1.6
Maximum energy dissipation one
channel
EAS
mJ
2)V
bat=16V,
Vclamp=45V,
tpulse= 4 ms
2) Pulse shape represents inductive switch off: ID(t) = ID(0) × (1 - t / tpulse); 0 < t < tpulse
single pulse
–
95
Tj(0) = 150 °C
ID(0) =0.50 A
repetitive (1 · 104 cycles)
repetitive (1 · 106 cycles)
EAR
–
–
75
45
Tj(0) = 105 °C
ID(0) =0.35 A
ID(0) =0.35 A
Logic Pins
4.1.7
IN1,IN2,IN3,IN4;Voltage at input pins
V
IN
-0.3
5.5
V
4.1.8
RST; Voltage at reset pin
V
RST
-0.3
5.5
V
4.1.9
LHI; Voltage at limp home input pin
V
LHI
-0.3
5.5
V
4.1.10
CS; Voltage at chip select
V
CS
-0.3
V
DD + 0.3
V
3)
3) level must not exceed
V
DD+0.3V < 5.5 V
4.1.11
SCLK; Voltage at serial clock pin
V
SCLK
-0.3
V
DD + 0.3
V
3)
4.1.12
SI; Voltage at serial input pin
V
SI
-0.3
V
DD + 0.3
V
3)
4.1.13
SO; Voltage at serial output pin
V
SO
-0.3
V
DD + 0.3
V
3)
Temperatures
4.1.14
Junction Temperature
T
j
-40
150
°C–
4.1.15
Storage Temperature
T
stg
-55
150
°C–
ESD Susceptibility
4.1.16
ESD Resistivity
VESD
-4
4
kV
HBM4)
4) ESD susceptibility, HBM according to EIA/JESD 22-A114



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