ATP613 datasheet(1/5 Pages) SANYO

Numer części	ATP613

Szczegółowy opis	N-Channel Silicon MOSFET General-Purpose Switching Device Applications

PDF	5 Pages

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Producent	SANYO [Sanyo Semicon Device]

Strona internetowa	https://www.sanyo-av.com/us/

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ATP613

No. A1903-1/5

Features

•

Reverse recovery time trr=60ns(typ.)

•

ON-resistance RDS(on)=1.55Ω(typ.)

•

Input Capacitance Ciss=350pF(typ.)

•

10V drive

•

Halogen free compliance

Speciﬁcations

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

500

V

Gate-to-Source Voltage

VGSS

±30

V

Drain Current (DC)

ID

5.5

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

19

A

Source-to-Drain Diode Forward Current (DC)

IS

5.5

A

Source-to-Drain Diode Forward Current (Pulse)

ISP

PW≤10μs, duty cycle≤1%

19

A

Allowable Power Dissipation

PD

Tc=25°C70

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *1

EAS

93

mJ

Avalanche Current *2

IAV

5.5

A

Note :

*1 VDD=99V, L=5mH, IAV=5.5A

*2 L≤5mH, Single pulse (Fig.1)

Package Dimensions

unit : mm (typ)

7057-001

Ordering number : ENA1903

D1510QB TKIM TC-00002545

SANYO Semiconductors

DATA SHEET

ATP613

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Product & Package Information

• Package

: ATPAK

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

Marking

Electrical Connection

1 : Gate

2 : Drain

3 : Source

4 : Drain

SANYO : ATPAK

0.4

0.55

13

2

6.5

0.6

4

0.8

1.5

0.4

2.6

4.6

0.4

2.3

TL

ATP613

LOT No.

1

3

2,4

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