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ATP613 Arkusz danych(PDF) 3 Page - Sanyo Semicon Device

Numer części ATP613
Szczegółowy opis  N-Channel Silicon MOSFET General-Purpose Switching Device Applications
PDF  5 Pages
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Producent  SANYO [Sanyo Semicon Device]
Strona internetowa  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP613 Arkusz danych(HTML) 3 Page - Sanyo Semicon Device

  ATP613 Datasheet HTML 1Page - Sanyo Semicon Device ATP613 Datasheet HTML 2Page - Sanyo Semicon Device ATP613 Datasheet HTML 3Page - Sanyo Semicon Device ATP613 Datasheet HTML 4Page - Sanyo Semicon Device ATP613 Datasheet HTML 5Page - Sanyo Semicon Device  
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ATP613
No. A1903-3/5
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
RDS(on) -- Tc
IS -- VSD
SW Time -- ID
Gate-to-Source Voltage, VGS -- V
Case Temperature, Tc --
°C
Drain Current, ID -- A
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Diode Forward Voltage, VSD -- V
| yfs | -- I
D
Ciss, Coss, Crss -- VDS
VDS=20V
IT16201
IT16202
012
10
0
0
12
2
6
8
10
4
20
26
12
48
16
14
10
18
0
12
8
2
4
10
6
6
24
8
VGS=5V
Tc=25
°C
6V
7V
8V
10V
15V
25°C
75°C
050
35
30
40
45
15
10
520
25
IT16208
IT16207
IT16206
0
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1.4
0.01
7
5
3
2
IT16205
f=1MHz
Coss
Crss
0.01
0.1
2
23
5
23
57
1.0
35 7
10
7
100
1000
10
3
2
5
7
3
2
5
7
0.1
1.0
7
23
5
10
VDD=200V
VGS=10V
td(off)
tf
td(on)
t r
IT16203
0
0
5.0
15
2
4
6
8
101214
4.5
3.0
4.0
3.5
0.5
1.0
2.5
2.0
1.5
ID=2.75A
Single pulse
Tc=75
°C
--25
°C
0.1
2
23
5
7
Ciss
Tc=
--25
°C
75°
C
25°
C
0.1
0.01
7
5
3
2
7
5
3
2
1.0
10
7
5
3
2
1.0
7
5
3
2
10
7
5
3
2
100
7
5
3
10
100
1000
7
5
7
5
3
2
3
2
25
°C
VDS=10V
IT16204
--50
--25
0
25
50
75
100
125
150
0
5.0
3.5
1.5
0.5
4.5
3.0
2.5
4.0
2.0
1.0
V GS
=10V
, I D
=2.75A
Single pulse
VGS=0V
Single pulse



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