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IXFN80N50 Arkusz danych(PDF) 4 Page - IXYS Corporation |
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IXFN80N50 Arkusz danych(HTML) 4 Page - IXYS Corporation |
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4 / 4 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. V SD - Volts 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 Pulse Width - Seconds 10-4 10-3 10-2 10-1 100 101 0.001 0.010 0.100 1.000 V DS - Volts 0 5 10 15 20 25 30 35 40 100 1000 10000 Gate Charge - nC 0 50 100 150 200 250 300 350 400 0 2 4 6 8 10 Crss Coss V DS = 250 V I D = 40 A I G = 10 mA f = 100kHz T J = 25 OC Ciss 30000 T J = 125 OC V GS = 0V Single Pulse IXFN 80N50 Fig. 9. Source-to-Drain Voltage Drop Fig. 7 Gate Charge Characteristic Curve Fig. 8 Capacitance Curves Fig.10. Transient Thermal Resistance |
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