IXFN80N50 datasheet(1/4 Pages) IXYS

Numer części	IXFN80N50

Szczegółowy opis	HiPerFET Power MOSFETs Single Die MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Producent	IXYS [IXYS Corporation]

Strona internetowa	http://www.ixys.com

Logo

1 / 4 page

Features

• International standard package

• miniBLOC, with Aluminium nitride

isolation

• Low R

DS (on) HDMOS

TM

process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

Advantages

• Easy to mount

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 3 mA

500

V

GS(th)

V

DS = VGS, ID = 8 mA

2.5

4.5

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±200

nA

I

DSS

V

DS = VDSS

T

J =

25

°C

100

µA

V

GS = 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

55 m

Ω

Pulse test, t

≤ 300 µs,

duty cycle d

≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

500

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C, Chip capability

80

A

I

DM

T

C = 25°C, pulse width limited by TJM

320

A

I

AR

T

C = 25°C80

A

E

AR

T

C = 25°C64

mJ

E

AS

T

C = 25°C6

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

780

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

30

g

HiPerFETTM

Power MOSFETs

Single Die MOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

DS98538E(12/03)

D

S

G

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal of miniBLOC can be used

as Main or Kelvin Source

V

DSS

= 500 V

I

D25

=

80 A

R

DS(on)

=

55 m

Ω

t

rr

≤≤≤≤≤ 250 ns

IXFN 80N50

Podobny numer części - IXFN80N50

Producent	Numer części	Arkusz danych	Szczegółowy opis
IXYS Corporation	IXFN80N50	126Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET
Inchange Semiconductor ...	IXFN80N50	663Kb / 3P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXFN80N50P	162Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFN80N50Q2	118Kb / 4P	HiPerFET Power MOSFET Q2-Class
	IXFN80N50Q2	174Kb / 5P	Power MOSFET

More results

Podobny opis - IXFN80N50

Producent	Numer części	Arkusz danych	Szczegółowy opis
IXYS Corporation	IXFN340N06	100Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN280N07	102Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN34N100	101Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN75N50	126Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN39N90	125Kb / 4P	HiPerFET Power MOSFETs Single MOSFET Die
	IXFN60N60	71Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN130N30	162Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFL44N60	532Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN48N55	77Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN80N48	137Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET

More results

IXFN80N50 Arkusz danych(PDF) 1 Page - IXYS Corporation

IXFN80N50 Arkusz danych(HTML) 1 Page - IXYS Corporation

Podobny numer części - IXFN80N50

Podobny opis - IXFN80N50

Html Pages

1 2 3 4

Arkusz danych Pobierz

Link URL