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MPC5675K Arkusz danych(PDF) 75 Page - Freescale Semiconductor, Inc

Numer części MPC5675K
Szczegółowy opis  Microcontroller is a 32-bit embedded controller designed for advanced
PDF  140 Pages
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Producent  FREESCALE [Freescale Semiconductor, Inc]
Strona internetowa  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MPC5675K Arkusz danych(HTML) 75 Page - Freescale Semiconductor, Inc

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Electrical characteristics
MPC5675K Microcontroller Data Sheet, Rev. 4
Preliminary—Subject to Change Without Notice
Freescale Semiconductor
75
See Section 6, Reference documents, for more information.
3.5.2
Test parameters
The following test parameters shall be used:
In case of only narrow band disturbances the maximum of the results will not change. In case of broadband
signals the emission has to be below the limits.
3.6
Electrostatic discharge (ESD) characteristics
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of
each sample according to each pin combination. The sample size depends on the number of supply pins in
the device (3 parts × (n + 1) supply pin). This test conforms to the AEC-Q100-002/-003/-011 standard.
3.7
Static latch-up (LU)
Two complementary static tests are required on six parts to assess the latch-up performance:
A supply over voltage is applied to each power supply pin.
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with the EIA/JESD 78 IC latch-up standard.
Table 14. EMC test parameters
Method
Frequency Range
Receiver
BW
Step Size
150 Ohm
1 MHz to 1000 MHz
1 MHz
500 kHz
TEM
Table 15. ESD ratings1, 2
NOTES:
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated
Circuits.
2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing shall be performed per applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
No.
Symbol
Parameter
Conditions
Class
Max value3
3 Data based on characterization results, not tested in production.
Unit
1VESD(HBM)
SR Electrostatic discharge
(Human Body Model)
TA =25 °C
conforming to AEC-Q100-002
H1C
2000
V
2VESD(MM)
SR Electrostatic discharge
(Machine Model)
TA =25 °C
conforming to AEC-Q100-003
M2
200
V
3VESD(CDM)
SR Electrostatic discharge
(Charged Device Model)
TA =25 °C
conforming to AEC-Q100-011
C3A
750 (corners)
V
500



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