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MPC5675K Arkusz danych(PDF) 75 Page - Freescale Semiconductor, Inc |
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MPC5675K Arkusz danych(HTML) 75 Page - Freescale Semiconductor, Inc |
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75 / 140 page ![]() Electrical characteristics MPC5675K Microcontroller Data Sheet, Rev. 4 Preliminary—Subject to Change Without Notice Freescale Semiconductor 75 See Section 6, Reference documents, for more information. 3.5.2 Test parameters The following test parameters shall be used: In case of only narrow band disturbances the maximum of the results will not change. In case of broadband signals the emission has to be below the limits. 3.6 Electrostatic discharge (ESD) characteristics Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n + 1) supply pin). This test conforms to the AEC-Q100-002/-003/-011 standard. 3.7 Static latch-up (LU) Two complementary static tests are required on six parts to assess the latch-up performance: • A supply over voltage is applied to each power supply pin. • A current injection is applied to each input, output and configurable I/O pin. These tests are compliant with the EIA/JESD 78 IC latch-up standard. Table 14. EMC test parameters Method Frequency Range Receiver BW Step Size 150 Ohm 1 MHz to 1000 MHz 1 MHz 500 kHz TEM Table 15. ESD ratings1, 2 NOTES: 1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. 2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification. No. Symbol Parameter Conditions Class Max value3 3 Data based on characterization results, not tested in production. Unit 1VESD(HBM) SR Electrostatic discharge (Human Body Model) TA =25 °C conforming to AEC-Q100-002 H1C 2000 V 2VESD(MM) SR Electrostatic discharge (Machine Model) TA =25 °C conforming to AEC-Q100-003 M2 200 V 3VESD(CDM) SR Electrostatic discharge (Charged Device Model) TA =25 °C conforming to AEC-Q100-011 C3A 750 (corners) V 500 |
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