2N6796LCC4 datasheet(1/2 Pages) SEME-LAB

Numer części	2N6796LCC4

Szczegółowy opis	N-CHANNEL POWER MOSFET

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10/99

2N6796LCC4

VDSS

= 100V

ID

= 7.4A

RDS(ON) = 0.18Ω

Ω

FEATURES

• Hermetically sealed ceramic surface

mount package

• Small footprint

• Simple drive requirements

VDS

Drain–Source Voltage

VDGR

Drain–Gate Voltage

(VGS = 1.0mΩ)

VGS

Gate–Source Voltage

ID

Drain Current Continuous

IDM

Drain Current Pulsed

PD

Total Device Dissipation @ TC = 25°C

Derate above 25°C

TJ , TSTG Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RθJC

Thermal Resistance Junction to Case

RθJC

Thermal Resistance Junction to Ambient

TL

Maximum Lead Temperature 1.5mm from Case for 10 secs.

100V

±20V

7.4A

30A

22W

0.17°C/W

–55 to +150°C

5.0°CW

175°CW

300°C

MECHANICAL DATA

Dimensions in mm (inches)

LCC4 CERAMIC SURFACE MOUNT PACKAGE

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

Underside View

Pads 6, 7, 8, 9, 10, 11, 12, 13.

Source

Pads 4,5

Gate

Pads 1,2,15,16,17,18

Drain

Pads 3,14

Not Connected

1.39 (0.055)

1.15 (0.045)

0.76 (0.030)

0.51 (0.020)

1.39 (0.055)

1.02 (0.040)

15 16

13

12

14

3

4

5

6

7

17

18

1

2

11

10

8

9

9.14 (0.360)

8.64 (0.340)

1.27 (0.050)

1.07 (0.040)

≈ 2.16 (0.085)

7.62 (0.300)

7.12 (0.280)

1.65 (0.065)

1.40 (0.055)

0.33 (0.013)

0.08 (0.003)

0.43 (0.017)

0.18 (0.007

Rad.

N-CHANNEL

POWER MOSFET

Podobny numer części - 2N6796LCC4

Producent	Numer części	Arkusz danych	Szczegółowy opis
Seme LAB	2N6796	18Kb / 2P	TMOS FET TRANSISTOR N - CHANNEL
Intersil Corporation	2N6796	140Kb / 7P	8A, 100V, 0.180 Ohm, N-Channel Power MOSFET November 1998
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Microsemi Corporation	2N6796	102Kb / 2P	N-CHANNEL MOSFET
Microsemi Corporation	2N6796	182Kb / 4P	N-CHANNEL MOSFET

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Podobny opis - 2N6796LCC4

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Fairchild Semiconductor	FQA70N15	738Kb / 8P	N-Channel Power MOSFET
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ON Semiconductor	EMH2412-TL-H	550Kb / 7P	N-Channel Power MOSFET July, 2013
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