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TCS1200

1200 Watts, 53 Volts

Pulsed Avionics at 1030 MHz

GENERAL DESCRIPTION

The TCS1200 is a high power COMMON BASE bipolar transistor.

It is

designed for pulsed systems at 1030 MHz, with the pulse width and duty

required for TCAS applications. The device has gold thin-film metalization and

emitter ballasting for proven highest MTTF. The transistor includes input and

output prematch for broadband capability.

Low thermal resistance package

reduces junction temperature, extends life.

CASE OUTLINE

55TU-1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25

2095 W

Maximum Voltage and Current

65 V

3.5 V

60 A

Maximum Temperatures

Storage Temperature

-65 to +200

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Out

Pulse Width = 32

µs

1200

W

Power Gain

Duty Factor = 2%

10.2

dB

η

c

Collector Efficiency

45

%

Return Loss

-10

dB

Tr

Rise Time

100

ns

Pd

Pulse Droop

0.5

dB

VSWR

Load Mismatch Tolerance

1

Pin = 115 Watts

2.5:1

FUNCTIONAL CHARACTERISTICS @ 25

°C

Emitter to Base Breakdown

Ie = 40 mA

3.5

V

Collector to Emitter Breakdown

Ic = 100 mA

65

V

DC – Current Gain

Vce = 5V, Ic = 1A

20

Thermal Resistance

0.012

°C/W

Rev B April, 2009

NOTES:

1.

At rated output power and pulse conditions

2.

See plots below for Mode S data at 50V as well as the standard 32us,2% data at 53V