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SW640 Arkusz danych(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

Numer części SW640
Szczegółowy opis  N-channel MOSFET
PDF  7 Pages
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Producent  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Strona internetowa  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW640 Arkusz danych(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

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Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
4/7
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
،ط Notes :
1. V
GS
= 0 V
2. I
D
= 250 ¥ىA
T
J
, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
،ط Notes :
1. V
GS
= 10 V
2. I
D
= 4.5 A
T
J
, Junction Temperature [
oC]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
،ط Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
2
4
6
8
10
T
C'
Case Temperature [
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
،ط Notes :
1. Z
¥èJC
(t) = 1.60 ،ة/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
SW640
SAMWIN



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