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SW640 Arkusz danych(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW640 Arkusz danych(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 7 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Features ■ High ruggedness ■ R DS(ON) (Max 0.18 Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. N-channel MOSFET Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to Source Voltage 200 V I D Continuous Drain Current (@T C=25 oC) 18 A Continuous Drain Current (@T C=100 oC) 11.4 A I DM Drain current pulsed (note 1) 72 A V GS Gate to Source Voltage ± 30 V E AS Single pulsed Avalanche Energy (note 2) 250 mJ E AR Repetitive Avalanche Energy (note 1) 13.9 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5.5 V/ns P D Total power dissipation (@T C=25 oC) 139 W Derating Factor above 25oC 1.1 W/oC T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit TO-220 R thjc Thermal resistance, Junction to case 0.9 oC/W R thcs Thermal resistance, Case to Sink 0.5 oC/W R thja Thermal resistance, Junction to ambient 62.5 oC/W Mar. 2011. Rev. 2.0 1/7 *. Drain current is limited by junction temperature. BV DSS : 200V I D : 18A R DS(ON) : 0.18ohm 1 2 3 1. Gate 2. Drain 3. Source 1 2 3 TO-220 SW640 SAMWIN Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE Order Codes |
Podobny numer części - SW640 |
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Podobny opis - SW640 |
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