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BD912 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części BD912
Szczegółowy opis  Silicon PNP Power Transistors
PDF  5 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD912 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

  BD912 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD912 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BD912 Datasheet HTML 3Page - Inchange Semiconductor Company Limited BD912 Datasheet HTML 4Page - Inchange Semiconductor Company Limited BD912 Datasheet HTML 5Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
BD910 BD912
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BD910
-80
VCEO(SUS)
Collector-emitter
sustaining voltage
BD912
IC=-0.1A; IB=0
-100
V
VCEsat-1
Collector-emitter saturation voltage
IC=-5 A;IB=-0.5 A
-1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-10A;IB=-2.5 A
-3.0
V
VBEsat
Base-emitter saturation voltage
IC=-10A;IB=-2.5 A
-2.5
V
VBE
Base-emitter voltage
IC=-5A ; VCE=-4V
-1.5
V
BD910
VCB=-80V; IE=0
TC=150℃
-0.5
-5.0
ICBO
Collector cut-off current
BD912
VCB=-100V; IE=0
TC=150℃
-0.5
-5.0
mA
BD910
VCE=-40V; IB=0
ICEO
Collector cut-off current
BD912
VCE=-50V; IB=0
-1.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-0.5A ; VCE=-4V
40
250
hFE-2
DC current gain
IC=-5A ; VCE=-4V
15
150
hFE-3
DC current gain
IC=-10A ; VCE=-4V
5
fT
Transition frequency
IC=-0.5A ; VCE=-4V
3
MHz



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