BD912 datasheet(1/5 Pages) ISC

Numer części	BD912

Szczegółowy opis	Silicon PNP Power Transistors

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD910 BD912

DESCRIPTION

・

・With TO-220C package

・Complement to type BD909 BD911

APPLICATIONS

・Intented for use in power linear

and switching applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD910

-80

VCBO

Collector-base voltage

BD912

Open emitter

-100

V

BD910

-80

VCEO

Collector-emitter voltage

BD912

Open base

-100

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-15

A

IB

Base current

-5

A

PC

Collector power dissipation

TC≤25℃

90

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance junction to case

1.4

℃/W

Podobny numer części - BD912

Producent	Numer części	Arkusz danych	Szczegółowy opis
Mospec Semiconductor	BD912	143Kb / 3P	POWER TRANSISTORS(15A,90W)
STMicroelectronics	BD912	97Kb / 6P	COMPLEMENTARY SILICON POWER TRANSISTORS Oct-1999
Boca Semiconductor Corp...	BD912	149Kb / 3P	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
Savantic, Inc.	BD912	148Kb / 5P	Silicon PNP Power Transistors
Rectron Semiconductor	BD912	76Kb / 3P	TO-220 - Power Transistors and Darlingtons

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Podobny opis - BD912

Producent	Numer części	Arkusz danych	Szczegółowy opis
Bourns Electronic Solut...	BD244	106Kb / 5P	PNP SILICON POWER TRANSISTORS
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