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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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K2611B Arkusz danych(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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K2611B Arkusz danych(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 7 page  Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance K2611B K2611B K2611B K2611B 2/7 Electrical Characteristics(Tc=25℃) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V Drain cut -off current IDSS VDS=900V,VGS=0V - - 10 µA VDS=720V,Tc=125℃ 100 µA Drain -source breakdown voltage V(BR)DSS ID=250µA,VGS=0V 900 - - V Gate threshold voltage VGS(th) VDS=VGS,ID=250µA 3.0 - 5.0 V Drain -source ON resistance RDS(ON) VGS=10V,ID=5.5A - 0.95 1.10 Ω Forward Transconductance gfs VDS=50V,ID=5.5A - 12 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 2700 3500 pF Reverse transfer capacitance Crss - 30 40 Output capacitance Coss - 260 340 Switching time Turn-on Rise time tr VDD=450V, ID=11A RG=25Ω (Note4,5) - 135 280 ns Turn-on Delay time td(on) - 65 140 Turn-on Fall time tf - 90 190 Turn-off Delay time td(off) - 165 340 Total gate charge(gate-source plus gate-drain) Qg VDD=720V, VGS=10V, ID=11A (Note4,5) - 72 94 nC Gate-source charge Qgs - 16 - Gate-drain("miller") Charge Qgd - 35 - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 11 A Pulse drain reverse current IDRP - - - 45 A Forward voltage(diode) VDSF IDR=11A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=11A,VGS=0V, dIDR / dt =100 A / µs - 850 - ns Reverse recovery charge Qrr - 11.2 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=15mH IAS=11A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤11A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
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