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Zakładka z wyszukiwarką danych komponentów |
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K2611B Arkusz danych(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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K2611B Arkusz danych(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. K2611B K2611B K2611B K2611B Rev.A Nov.2011 Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET Features ■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 900 V ID Continuous Drain Current(@Tc=25℃) 11 A Continuous Drain Current(@Tc=100℃) 7 A IDM Drain Current Pulsed (Note1) 45.6 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note2) 1000 mJ EAR Repetitive Avalanche Energy (Note1) 30 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.0 V/ ns PD Total Power Dissipation(@Tc=25℃) 300 W Derating Factor above 25℃ 2.38 W/℃ TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance , Junction -to -Case - - 0.42 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 40 ℃/W |
Podobny numer części - K2611B |
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Podobny opis - K2611B |
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