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BD241 Arkusz danych(PDF) 1 Page - Comset Semiconductor |
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BD241 Arkusz danych(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() NPN BD241 – A – B – C 23/10/2012 COMSET SEMICONDUCTORS 1/3 M ME ED DIIU UM M P PO OW WE ER R L LIIN NE EA AR R A AN ND D S SW WIIT TC CH HIIN NG G A AP PP PL LIIC CA AT TIIO ON NS S.. The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The PNP complements are BD242, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage (IB = 0) BD241 45 V BD241A 60 BD241B 80 BD241C 100 VCER Collector-Emitter Voltage (RBE = 100 Ω) BD241 55 V BD241A 70 BD241B 90 BD241C 115 VEBO Emitter-Base Voltage (IC = 0) BD241 5.0 V BD241A BD241B BD241C IC Collector Current IC 3 A ICM 5 IB Base Current 1 A PT Power Dissipation @ Tamb = 25° C 2 W @ Tcase = 25° C 40 W TJ Junction Temperature 150 °C TS Storage Temperature -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-amb Thermal Resistance, Junction-ambient 62.5 °C/W RthJ-case Thermal Resistance, Junction-case 3.13 °C/W |
Podobny numer części - BD241 |
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Podobny opis - BD241 |
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