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BD241 Arkusz danych(PDF) 2 Page - Comset Semiconductor

Numer części BD241
Szczegółowy opis  MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
PDF  3 Pages
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Producent  COMSET [Comset Semiconductor]
Strona internetowa  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BD241 Arkusz danych(HTML) 2 Page - Comset Semiconductor

  BD241 Datasheet HTML 1Page - Comset Semiconductor BD241 Datasheet HTML 2Page - Comset Semiconductor BD241 Datasheet HTML 3Page - Comset Semiconductor  
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NPN BD241 – A – B – C
23/10/2012
COMSET SEMICONDUCTORS
2/3
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
ICEO
Collector Cutoff Current
VCE=30 V
BD241
-
-
0.3
mA
VCE=30 V
BD241A
-
-
VCE=60 V
BD241B
-
-
VCE=60 V
BD241C
-
-
IEBO
Emitter Cutoff Current
VBE=5 V
BD241
-
-
1.0
mA
BD241A
-
-
BD241B
-
-
BD241C
-
-
ICES
Collector Cutoff Current
(VBE = 0)
VCE=55 V
BD241
-
-
0.2
mA
VCE=70 V
BD241A
-
-
VCE=90 V
BD241B
-
-
VCE=115 V
BD241C
-
-
VCEO(sus)
Collector-Emitter
Sustaining
Voltage (IB = 0) (*)
IC =30mA
BD241
45
V
BD241A
60
BD241B
80
BD241C
100
hFE
DC Current Gain (*)
VCE=4 V, IC=1 A
BD241
25
-
-
-
BD241A
BD241B
BD241C
VCE=4 V, IC=3 A
BD241
10
-
-
BD241A
BD241B
BD241C
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=3 A, IB=0.6 A
BD241
-
-
1.2
V
BD241A
BD241B
BD241C
VBE(on)
Base-Emitter Voltage (*)
VCE=4 V, IC=3 A
BD241
-
-
1.8
V
BD241A
BD241B
BD241C
hfe
Small Signal Current Gain
VCE=10 V
IC=0.5 A
f = 1KHz
BD241
20
-
-
BD241A
BD241B
BD241C
VCE=10 V
IC=0.5 A
f = 1MHz
BD241
3
-
-
-
BD241A
BD241B
BD241C
(*) Pulse Width
≈ 300 µs, Duty Cycle ∠ 2.0%



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