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DTP9530 Arkusz danych(PDF) 4 Page - DinTek Semiconductor Co,.Ltd

Numer części DTP9530
Szczegółowy opis  N-Channel 30-V (D-S) MOSFET
PDF  8 Pages
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Producent  DINTEK [DinTek Semiconductor Co,.Ltd]
Strona internetowa  http://www.daysemi.jp/
Logo DINTEK - DinTek Semiconductor Co,.Ltd

DTP9530 Arkusz danych(HTML) 4 Page - DinTek Semiconductor Co,.Ltd

  DTP9530 Datasheet HTML 1Page - DinTek Semiconductor Co,.Ltd DTP9530 Datasheet HTML 2Page - DinTek Semiconductor Co,.Ltd DTP9530 Datasheet HTML 3Page - DinTek Semiconductor Co,.Ltd DTP9530 Datasheet HTML 4Page - DinTek Semiconductor Co,.Ltd DTP9530 Datasheet HTML 5Page - DinTek Semiconductor Co,.Ltd DTP9530 Datasheet HTML 6Page - DinTek Semiconductor Co,.Ltd DTP9530 Datasheet HTML 7Page - DinTek Semiconductor Co,.Ltd DTP9530 Datasheet HTML 8Page - DinTek Semiconductor Co,.Ltd  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
0.01
0.001
0.1
10
100
TJ = 150 °C
TJ = 25 °C
VSD -Source-to-Drain Voltage (V)
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
ID =5mA
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.000
0.005
0.010
0.015
0.020
0.025
012
345
67
8
910
TJ =25 °C
TJ = 125 °C
ID =15A
VGS - Gate-to-Source Voltage (V)
0
40
80
120
160
200
0
1
1
1
0
0
.
00.01
Time (s)
0.1
Safe Operating Area, Junction-to-Ambient
100
1
0
0
1
0
1
1
1
0
.
0
0.01
10
0.1
0.1
1ms
TC = 25 °C
Single Pulse
10 ms
100 ms
DC
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
10 s
Limited byRDS(on)*
1 s
DT
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