MCP1826_13 datasheet(20/38 Pages) MICROCHIP

20 / 38 page

MCP1826/MCP1826S

DS22057B-page 20

 2007-2013 Microchip Technology Inc.

The maximum power dissipation capability for a

package can be calculated given the junction-to-

ambient thermal resistance and the maximum ambient

temperature for the application. Equation 5-4 can be

used to determine the package maximum internal

power dissipation.

EQUATION 5-4:

EQUATION 5-5:

EQUATION 5-6:

5.3

Typical Application

Internal power dissipation, junction temperature rise,

junction temperature and maximum power dissipation

is calculated in the following example. The power

dissipation as a result of ground current is small

enough to be neglected.

5.3.1

POWER DISSIPATION EXAMPLE

5.3.1.1

Device Junction Temperature Rise

The internal junction temperature rise is a function of

internal power dissipation and the thermal resistance

from junction to ambient for the application. The

thermal resistance from junction-to-ambient (R

JA) is

derived from EIA/JEDEC standards for measuring

thermal resistance. The EIA/JEDEC specification is

JESD51. The standard describes the test method and

board specifications for measuring the thermal

resistance from junction to ambient. The actual thermal

resistance for a particular application can vary

depending on many factors such as copper area and

thickness. Refer to AN792, “A Method to Determine

How Much Power a SOT23 Can Dissipate in an Appli-

cation” (DS00792), for more information regarding this

subject.

PDMAX



TJMAX



TAMAX



–





---------------------------------------------------

PD(MAX) = Maximum device power dissipation

TJ(MAX) = Maximum continuous junction

temperature

TA(MAX) = Maximum ambient temperature

JA = Thermal resistance from junction to

ambient

TJRISE



PDMAX







TJ(RISE) = Rise in device junction temperature

over the ambient temperature

PD(MAX) = Maximum device power dissipation

JA = Thermal resistance from junction to

ambient

TJRISE



TJ = Junction temperature

TJ(RISE) = Rise in device junction temperature

over the ambient temperature

TA = Ambient temperature

Package

Package Type = TO-220-5

Input Voltage

VIN = 3.3V ± 5%

LDO Output Voltage and Current

VOUT = 2.5V

IOUT = 1000 mA

Maximum Ambient Temperature

TA(MAX) = 60°C

Internal Power Dissipation

PLDO(MAX) =(VIN(MAX) – VOUT(MIN)) x IOUT(MAX)

PLDO = ((3.3V x 1.05) – (2.5V x 0.975))

x 1000 mA

PLDO = 1.028 Watts

TJ(RISE) =PTOTAL x RJA

TJ(RISE) = 1.028 W x 29.3°C/W

TJ(RISE) =30.12°C

MCP1826 Arkusz danych(PDF) 20 Page - Microchip Technology

MCP1826 Arkusz danych(HTML) 20 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38

Arkusz danych Pobierz

Link URL