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T8T Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części T8T
Szczegółowy opis  Snubberless?? logic level and standard 8 A Triacs
PDF  9 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T8T Arkusz danych(HTML) 3 Page - STMicroelectronics

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T8T
Characteristics
Doc ID 16192 Rev 3
3/9
Table 3.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
T8xxT
Unit
T810T
T820T
T825T
T835T
IGT
(1)
VD = 12 V, RL = 30 Ω
I - II - III
MAX.
10
20
25
35
mA
IV
40
VGT
VD = VDRM, RL = 30 Ω,
Tj = 25 °C
ALL
MAX.
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ,
Tj = 125 °C
ALL
MIN.
0.2
V
IH
(2)
IT = 500 mA
MAX.
15
25
30
40
mA
IL
IG = 1.2 IGT
I - III
MAX.
20
35
40
50
mA
IV
40
II
25
40
70
70
dV/dt (2)
VD = 67% VDRM, gate open
Tj = 125 °C
MIN.
100
750
500
2000
V/µs
Tj = 150 °C
(3)
50
500
300
1000
(di/dt)c (2)
(dV/dt)c = 0.1 V/µs
Tj = 125 °C
MIN.
5.4
A/ms
(dV/dt)c = 10 V/µs
2
4.5
Without snubber
3.4
8
(dV/dt)c = 0.1 V/µs
Tj = 150 °C
(3)
2.5
(dV/dt)c = 10 V/µs
1
2
Without snubber
2
6.5
1.
Minimum IGT is guaranted at 5% of IGT max.
2.
For both polarities of A2 referenced to A1.
3.
Derating information for excess temperature above Tj max.
Table 4.
Static characteristics
Symbol
Test conditions
Value
Unit
VT
(1)
ITM = 11.3 A, tp = 380 µs
Tj = 25 °C
MAX.
1.60
V
VTO
(1)
Threshold voltage
Tj = 125 °C
MAX.
0.87
V
RD
(1)
Dynamic resistance
Tj = 125 °C
MAX.
60
m
Ω
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
MAX.
5µA
Tj = 125 °C
1
mA
VD = 0.9 x VDRM
Tj = 150 °C
(2)
TYP.
1.9
1.
For both polarities of A2 referenced to A1.
2.
Derating information for excess temperature above Tj max.



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