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T8T Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części T8T
Szczegółowy opis  Snubberless?? logic level and standard 8 A Triacs
PDF  9 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T8T Arkusz danych(HTML) 4 Page - STMicroelectronics

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Characteristics
T8T
4/9
Doc ID 16192 Rev 3
Table 5.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
2.8
°C/W
Rth(j-a)
Junction to ambient (DC)
60
°C/W
Figure 1.
Maximum power dissipation versus
rms on-state current
Figure 2.
On-state rms current versus case
temperature
P(W)
0
1
2
3
4
5
6
7
8
9
10
01234
5
678
0
1
2
3
4
5
6
7
8
9
10
01234
5
678
180°
α = 180°
IT(RMS)(A)
IT(RMS)(A)
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
α = 180°
TC(°C)
Figure 3.
On-state rms current versus
ambient temperature
(free air convection)
Figure 4.
Relative variation of thermal
impedance versus pulse duration
IT(RMS)(A)
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
α = 180°
Ta(°C)
1.0E-02
1.0E-01
1.0E+00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
K = [Zth / Rth]
TO-220AB
TO-220AB
Zth(j-a)
Zth(j-c)
Tp(s)
Figure 5.
On-state characteristics
(maximum values)
Figure 6.
Surge peak on state current versus
number of cycles
ITM(A)
1
10
100
02
3
4
5
1
10
100
02
3
4
5
1
VTM(V)
Tjmax:
Vto = 0.87 V
Rd =6 0 mΩ
ITSM(A)
0
10
20
30
40
50
60
70
1
10
100
0
10
20
30
40
50
60
70
1
10
100
1000
Number of cycles
Repetitive
Tc = 97 °C
Non repetitive
Tj initial = 25 °C
One cycle
t = 20 ms



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